Room-temperature chlorination of As-rich GaAs (110)
- Department of Physics, University of California, Riverside, California 92521 (United States)
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Department of Physics, University of California, Riverside, California 92521 and Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
As-rich GaAs (110) is prepared by ion bombardment and annealing, followed by chlorination and reannealing. The surface is then reacted at room temperature with Cl{sub 2} gas and examined with soft x-ray photoelectron spectroscopy of the Ga and As3{ital d} core levels. After low exposures ({lt}5{times}10{sup 4} L), the surface appears to passivate with half a monolayer of Cl adsorbed, primarily as AsCl. Following sufficiently large ({approx_gt}5{times}10{sup 4} L) exposures, however, the surface begins to etch, as indicated by the continuous uptake of chlorine and the formation of As and Ga chlorides. After the largest exposures, the distribution of As chlorides still favors the monochloride, whereas the Ga chlorides favor GaCl{sub 2}. It is proposed that the heavily reacted surface is covered with {endash}AsCl{endash}GaCl{sub 2} treelike structures. The addition of Cl to form GaCl{sub 3} from GaCl{sub 2} is identified as the rate-limiting step in the overall etching reaction. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Brookhaven National Laboratory
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 286580
- Report Number(s):
- CONF-960117--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 14; ISSN 0734-211X; ISSN JVTBD9
- Country of Publication:
- United States
- Language:
- English
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