Role of surface stoichiometry in the Cl{sub 2}/GaAs(001) reaction
- Department of Physics, University of California, Riverside, California 92521 (United States)
- Chemical Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
- Synchrotron Radiation Research Center, Hsin-Chu, Taiwan, Republic of (China)
- Department of Synchrotron Radiation Research, Institute of Physics, Lund University, S-223 62 Lund (Sweden)
- Department of Physics, Chalmers University of Technology, S-412 96 Goeteborg (Sweden)
- Department of Materials Physics, Royal Institute of Technology, S-100 44 Stockholm (Sweden)
The room-temperature reaction of Cl{sub 2} with GaAs(001)-4{times}6, -{ital c}(2{times}8), and -{ital c}(4{times}4) surfaces is studied with synchrotron soft x-ray photoelectron spectroscopy. The chemical composition of the reacted surfaces is found to depend on the stoichiometry of the starting surface. In all cases, the reaction occurs stepwise, with Ga and As monochlorides formed prior to the dichlorides. The Ga-rich surface is initially more reactive than either of the As-rich surfaces and it forms more GaCl than the As-rich surfaces, which instead form more AsCl. The sticking coefficient for chlorine on GaAs(001) decays exponentially with coverage. A contribution from Cl atoms comprising the surface dichlorides is identified in the Cl 2{ital p} core-level spectra. {copyright} {ital 1996 American Vacuum Society}
- Research Organization:
- Brookhaven National Laboratory
- DOE Contract Number:
- AC02-76CH00016; AC03-76SF00098
- OSTI ID:
- 284676
- Report Number(s):
- CONF-9510385--
- Journal Information:
- Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 14; ISSN JVTAD6; ISSN 0734-2101
- Country of Publication:
- United States
- Language:
- English
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