Scaling of the Conductivity with Temperature and Uniaxial Stress in Si:B at the Metal-Insulator Transition

Journal Article · Fri Jan 01 04:00:00 EST 1999 · Physical Review Letters

DOI:https://doi.org/10.1103/PhysRevLett.82.137· OSTI ID:292728

Bogdanovich, S; Sarachik, M P ^[1]; Bhatt, R N ^[2]

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1. Physics Department, City College of the City University of New York, New York, New York 10031 (United States)
2. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544-5263 (United States)

Using uniaxial stress S to tune Si:B through the metal-insulator transition at a critical value S{sub c} , we find the dc conductivity at low temperatures shows an excellent fit to the scaling form {sigma}(S,thinspT)=AT{sup x}f[(S{minus}S{sub c})/T{sup y}] on both sides of the transition. The scaling functions yield reliable determinations of the temperature dependence of the conductivity in the metallic and insulating phases in the critical region. {copyright} {ital 1998} {ital The American Physical Society }

• DOE Contract Number: FG02-84ER45153
• OSTI ID: 292728
• Journal Information: Physical Review Letters, Journal Name: Physical Review Letters Journal Issue: 1 Vol. 82; ISSN 0031-9007; ISSN PRLTAO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON ADDITIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
SCALING
SILICON
STRESSES
TEMPERATURE DEPENDENCE