Study of molecular-beam epitactic growth of GaAs on (100) Sc{sub {ital x}}E{sub 1{minus}}{sub {ital x}}As/GaAs
- Oak Ridge National Laboratory, Solid State Division, P. O. Box 2008, Oak Ridge, Tennessee 37831-6057 (United States)
- Bellcore, 331 Newman Springs Road, Red Bank, New Jersey 07701 (United States)
- Department of Chemical Engineering and Materials Science, Amundson Hall, 421 Washington Avenue SE, University of Minnesota, Minneapolis, Minnesota 55455 (United States)
The growth of GaAs on (100)Sc{sub {ital x}}Er{sub 1{minus}{ital x}}As/GaAs ({ital x}=0 and 0.3) by molecular-beam epitaxy has been studied using transmission electron microscopy. The initial stages of the three-dimensional growth of GaAs on lattice-matched Sc{sub 0.3}Er{sub 0.7}As have been investigated at different growth temperatures. Besides (100) epitactic GaAs, there are also areas of {l_brace}111{r_brace}- and {l_brace}122{r_brace}-oriented GaAs observed on Sc{sub {ital x}}Er{sub 1{minus}{ital x}}As. The latter has a simple twin relationship with the neighboring (100) GaAs. Areas of {l_brace}111{r_brace}-oriented GaAs have been observed only at growth temperatures above 400 {degree}C and with moderate growth rates. The GaAs islands grown at 480 {degree}C are faceted on {l_brace}110{r_brace} and {l_brace}111{r_brace} low-index planes. These GaAs islands are elongated along {l_angle}011{r_angle} directions. The anisotropy of the island shape is greater at higher growth temperatures. The growth of GaAs on Sc{sub {ital x}}Er{sub 1{minus}{ital x}}As as islands is considered to be due to chemical rather than strain effects. The morphology of GaAs layers grown on Sc{sub {ital x}}Er{sub 1{minus}{ital x}}As is shown to have a strong dependence on the growth conditions.
- OSTI ID:
- 29260
- Journal Information:
- Journal of Applied Physics, Vol. 77, Issue 9; Other Information: PBD: 1 May 1995
- Country of Publication:
- United States
- Language:
- English
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