Unipolar complementary circuits using double electron layer tunneling transistors

Journal Article · Fri Jan 01 04:00:00 EST 1999 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.123009· OSTI ID:289258

Moon, J S; Simmons, J A; Blount, M A; Reno, J L; Hafich, M J ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-1415 (United States)

We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of two-dimensional{endash}two-dimensional interlayer tunneling, where a single transistor{emdash}in addition to exhibiting a well-defined negative-differential resistance{emdash}can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and bandbending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series. {copyright} {ital 1999 American Institute of Physics.}

• OSTI ID: 289258
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 2 Vol. 74; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
GALLIUM ARSENIDES
INTEGRATED CIRCUITS
MEMORY DEVICES
MOLECULAR BEAM EPITAXY
TRANSISTORS
TUNNEL EFFECT