Unipolar Complementary Circuits Using Double Electron Layer Tunneling Tansistors

Journal Article · Mon Oct 19 04:00:00 EDT 1998 · Applied Physics Letters

OSTI ID:1083

Blount, M A; Hafich, M J; Moon, J S; Reno, J L; Simmons, J A

We demonstrate unipolar complementary circuits consisting of a pair of resonant tunneling transistors based on the gate control of 2D-2D interlayer tunneling, where a single transistor - in addition to exhibiting a welldefined negative-differential-resistance can be operated with either positive or negative transconductance. Details of the device operation are analyzed in terms of the quantum capacitance effect and band-bending in a double quantum well structure, and show good agreement with experiment. Application of resonant tunneling complementary logic is discussed by demonstrating complementary static random access memory using two devices connected in series.

• Research Organization: Sandia National Laboratories, Albuquerque, NM, and Livermore, CA
• Sponsoring Organization: USDOE
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 1083
• Report Number(s): SAND98-2354J; ON: DE00001083
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
Electronic Circuits
Field Effect Transistors
Sandia National Laboratories