Processing and characteristics of spin-cast ferroelectric Bi{sub 4}Ti{sub 3}O{sub 12} thin films
- Univ. of Cincinnati, OH (United States)
Bi{sub 4}Ti{sub 3}O{sub 12} thin films were successfully prepared on Si(100) substrates from solution precursors by spin-coating. The precursor solution consisted of a mixture of bismuth nitrate and titanium sec-butoxide, in stoichiometric ratio, dissolved in a carboxylic acid/amine solvent system. Most organics in the precursors were removed by 350{degrees}C and crystallization occurred below 500{degrees}C. A mechanism for molecular complex formation in the mixed alkoxide/carboxylate system is proposed. Heating rate, temperature, and film thickness showed significant effects on film (001) preferred orientation and grain growth. To limit film/substrate interfacial reactions, heat treatment was carried out at or below 850{degrees}C. Measured remament polarization in fired Bi{sub 4}Ti{sub 3}O{sub 12} varied between 8-20 {mu}C/cm{sup 2} with a coercive field of 100-180 kV/cm, depending on processing temperature.
- OSTI ID:
- 28831
- Report Number(s):
- CONF-931142--
- Country of Publication:
- United States
- Language:
- English
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