Crystallization from high temperature solutions of Si in Cu/Al solvent
A liquid phase epitaxy method is disclosed for forming thin crystalline layers of device quality silicon having less than 3{times}10{sup 16} Cu atoms/cc impurity, comprising: preparing a saturated liquid solution of Si in a Cu/Al solvent at about 20 to about 40 at. % Si at a temperature range of about 850 to about 1100 C in an inert gas; immersing or partially immersing a substrate in the saturated liquid solution; super saturating the solution by lowering the temperature of the saturated solution; holding the substrate in the saturated solution for a period of time sufficient to cause Si to precipitate out of solution and form a crystalline layer of Si on the substrate; and withdrawing the substrate from the solution. 3 figs.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC02-83CH10093
- Assignee:
- Midwest Research Inst., Kansas City, MO (United States)
- Patent Number(s):
- US 5,544,616/A/
- Application Number:
- PAN: 8-249,957
- OSTI ID:
- 288029
- Resource Relation:
- Other Information: PBD: 13 Aug 1996
- Country of Publication:
- United States
- Language:
- English
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