Monte Carlo simulation of inclined incidence of fast electrons to solids

Journal Article · Mon Jul 01 04:00:00 EDT 1996 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.588754· OSTI ID:286572

Gueorguiev, Y M; Mladenov, G M ^[1]; Ivanov, D I ^[2]

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1. Laboratory of Physical Problems of Electron-Beam Technologies, Institute of Electronics, Bulgarian Academy of Sciences, Tzarigradsko shose 72, 1784 Sofia (Bulgaria)
2. DIPI Group, B. Petkov Str. 65, Sofia (Bulgaria)

In the present work inclined incidence of accelerated electrons to solids is simulated using Monte Carlo technique. Spatial distributions of absorbed electron energy density in a 125 nm poly(methylmethacrylate) resist layer on bulk Si substrate are obtained for angles of incidence 30{degree}, 45{degree}, and 60{degree} at two beam energies{emdash}25 and 50 keV{emdash}together with the energy and angular distributions of the backscattered electrons. The results show strong asymmetry of the exposure distributions. Their peaks are significantly lower, wider, and 40{endash}100 nm shifted, and their shapes are different in comparison with those for normal incidence of electrons. The ratio between the maximum values of exposure distributions due to the forward scattered and the backscattered electrons decreases with decreasing angle of incidence. These peculiarities of exposure distributions may lead to enhanced proximity effects and cause deviation from required pattern shapes. Therefore, if inclined incidence of accelerated electrons to any surface occurs during electron beam lithography, it has to be taken into account. {copyright} {ital 1996 American Vacuum Society}

• OSTI ID: 286572
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 4 Vol. 14; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
ANGULAR DISTRIBUTION
BACKSCATTERING
COMPUTERIZED SIMULATION
ELECTRON COLLISIONS
ENERGY SPECTRA
INCIDENCE ANGLE
KEV RANGE 10-100
LITHOGRAPHY
MONTE CARLO METHOD
PMMA