InAsSb-based mid-infrared lasers (3.8{endash}3.9 {mu}m) and light-emitting diodes with AlAsSb claddings and semimetal electron injection, grown by metalorganic chemical vapor deposition
- Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 (United States)
Gain-guided, injection lasers using AlAsSb for optical confinement and a strained InAsSb/InAs multiquantum well active region were grown by metalorganic chemical vapor deposition. The semi-metal properties of a {ital p}-GaAsSb/{ital n}-InAs heterojunction are utilized as a source for injection of electrons into the active region of the laser. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8{endash}3.9 {mu}m. We also report on the two-color emission of a light-emitting diode with two different active regions to demonstrate multistage operation of these {open_quote}{open_quote}unipolar {close_quote}{close_quote} devices. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 286304
- Journal Information:
- Applied Physics Letters, Vol. 69, Issue 4; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
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