Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Photoluminescence studies of modulation doped coupled double quantum wells in magnetic fields

Conference ·
OSTI ID:286174
;  [1]; ; ;  [2];  [3]
  1. Northeastern Univ., Boston, MA (United States)
  2. Sandia National Labs., Albuquerque, NM (United States)
  3. Los Alamos National Lab., NM (United States)

We have studied the photoluminescence spectra of a series of mudulation doped couple double quantum well structures in parallel and perpendicular magnetic fields to 62 tesla at 4K and 77K, for B{parallel}a, the spectra display distinct Landau level transitions which show anti-crossing with the e1-hh1 exciton. At high fields, the lowest conduction band-valence exciton approaches the extrapolated 0- 0 Landau level. About 25 Tesla, there is valence band mixing of the e1-lh1, e1-hh2, e1-hh1 transitions. The spectral peaks display a diamagnetic shift in low in-plane magnetic fields which become linear in high fields. At magnetic fields beyond 40T, spin splitting is observed for both B{parallel}z and B{perpendicular} geometries. The partial energy gap discovered in conductance measurements in in-plane fields was not conclusively observed using photoluminescence spectroscopy, although anomalies in the energy dependence of the lowest level with magnetic field were evident at similar field values.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000; AC04-76DP00789
OSTI ID:
286174
Report Number(s):
SAND--96-1516C; CONF-960781--3; ON: DE96014068; CNN: Agreement DMR 5024-545-22
Country of Publication:
United States
Language:
English

Similar Records

Photoluminescence studies of semiconductor heterostructures in pulsed magnetic fields
Conference · Mon Dec 30 23:00:00 EST 1996 · OSTI ID:425963

Magnetoluminescence oscillations of a doped (Al,Ga)As/GaAs single heterojunction
Journal Article · Thu Dec 31 23:00:00 EST 1998 · Physical Review, B: Condensed Matter · OSTI ID:295537

Anticrossing and coupling of light-hole and heavy-hole states in (001) GaAs/Al{sub x}Ga{sub 1-x}As heterostructures
Journal Article · Sun Oct 15 00:00:00 EDT 2000 · Physical Review B · OSTI ID:40205618