Electrical properties of heteroepitaxial grown tin-doped indium oxide films

Journal Article · Mon Jul 01 00:00:00 EDT 1996 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.362910· OSTI ID:285545

Taga, N; Odaka, H ^[1]; Shigesato, Y; Yasui, I ^[2]; Kamei, M ^[3]; Haynes, T E ^[4]

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1. Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221 (Japan)
2. Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106 (Japan)
3. Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278 (Japan)
4. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)

Oriented thin-film tin-doped indium oxide (ITO) was heteroepitaxially grown on optically polished (100) or (111) planes of single-crystalline yttria-stabilized zirconia (YSZ) substrates using e-beam evaporation or dc magnetron sputtering techniques. Pole figure x-ray diffraction analyses revealed that the heteroepitaxial relations were (001)ITO{parallel}(001)YSZ, [100]ITO{parallel}[100]YSZ, and (111)ITO{parallel}(111)YSZ, [110]ITO{parallel}[110]YSZ, respectively. X-ray rocking curve analyses and Rutherford backscattering spectrometry revealed that the e-beam evaporated heteroepitaxial ITO films had much higher crystallinity than the one deposited by dc magnetron sputtering. Both carrier density and Hall mobility of the e-beam evaporated heteroepitaxial films showed steady increases in a wide temperature range, which could be interpreted in terms of the increasing Sn-doping efficiency caused by the improvement of the crystallinity of In{sub 2}O{sub 3} host lattice, and hence the decreasing Sn-based neutral scattering centers. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Oak Ridge National Laboratory
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 285545
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 2 Vol. 80; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIER MOBILITY
CRYSTAL STRUCTURE
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION FILMS
EPITAXIAL LAYERS
EPITAXY
INDIUM OXIDES
ITO LAYERS
RBS
SPUTTERED MATERIALS
SPUTTERING
TIN ADDITIONS
X-RAY DIFFRACTION
XRD