Electrical properties of heteroepitaxial grown tin-doped indium oxide films
- Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama 221 (Japan)
- Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106 (Japan)
- Department of Materials Science and Technology, Science University of Tokyo, Noda, Chiba 278 (Japan)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Oriented thin-film tin-doped indium oxide (ITO) was heteroepitaxially grown on optically polished (100) or (111) planes of single-crystalline yttria-stabilized zirconia (YSZ) substrates using e-beam evaporation or dc magnetron sputtering techniques. Pole figure x-ray diffraction analyses revealed that the heteroepitaxial relations were (001)ITO{parallel}(001)YSZ, [100]ITO{parallel}[100]YSZ, and (111)ITO{parallel}(111)YSZ, [110]ITO{parallel}[110]YSZ, respectively. X-ray rocking curve analyses and Rutherford backscattering spectrometry revealed that the e-beam evaporated heteroepitaxial ITO films had much higher crystallinity than the one deposited by dc magnetron sputtering. Both carrier density and Hall mobility of the e-beam evaporated heteroepitaxial films showed steady increases in a wide temperature range, which could be interpreted in terms of the increasing Sn-doping efficiency caused by the improvement of the crystallinity of In{sub 2}O{sub 3} host lattice, and hence the decreasing Sn-based neutral scattering centers. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 285545
- Journal Information:
- Journal of Applied Physics, Vol. 80, Issue 2; Other Information: PBD: Jul 1996
- Country of Publication:
- United States
- Language:
- English
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