Threshold investigation of oxide-confined vertical-cavity laser diodes

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.115744· OSTI ID:285521

Choquette, K D; Chow, W W; Hagerott Crawford, M; Geib, K M; Schneider, Jr, R P ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)

We report an experimental and theoretical analysis of the threshold properties of infrared oxide-confined vertical-cavity surface emitting lasers. We find good agreement between experiment and theory on the wavelength dependencies of the threshold current density and intrinsic voltage. The threshold voltage is shown to equal the sum of the calculated quasi-Fermi energy separation and the ohmic drop arising from a record low 17 to 30 {Omega} series resistance in these vertical-cavity lasers. Our analysis provides two independent means for determining the material threshold gain. A threshold gain of 500 cm{sup {minus}1} is found for these oxide-confined lasers, which is half that estimated for ion-implanted lasers with inferior electrical and optical confinement. {copyright} {ital 1996 American Institute of Physics.}

• Research Organization: Sandia National Laboratory
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 285521
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 26 Vol. 68; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ALUMINIUM ARSENIDES
GAIN
GALLIUM ARSENIDES
LASER DIODES
LAYERS
OXIDES
QUANTUM WELLS
SEMICONDUCTOR LASERS
THRESHOLD CURRENT
THRESHOLD VOLTAGE