Index guiding dependent effects in implant and oxide confined vertical-cavity lasers
Journal Article
·
· IEEE Photonics Technology Letters
- Sandia National Labs., Albuquerque, NM (United States). Photonics Research Dept.
Implant and oxide confined vertical-cavity surface-emitting lasers are compared in terms of properties dependent upon the nature of index guiding in the two structures including CW threshold current scaling with size, light-current linearity, pulsed operation delay, and beam profiles. The oxide confined lasers, fabricated by wet thermal oxidation, have a built-in index guide and thus exhibit substantially better properties than do lasers from the same wafer fabricated by proton implantation which rely on a thermal lens to reduce diffraction losses.
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 253680
- Journal Information:
- IEEE Photonics Technology Letters, Journal Name: IEEE Photonics Technology Letters Journal Issue: 6 Vol. 8; ISSN 1041-1135; ISSN IPTLEL
- Country of Publication:
- United States
- Language:
- English
Similar Records
Implanted-planar-buried-heterostructure, graded-index, separate-confinement-heterostructure laser in GaAs/AlGaAs
Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs
Low threshold current Implanted-Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure GaAs-AlGaAs laser
Journal Article
·
Sat Jul 01 00:00:00 EDT 1989
· IEEE Photonics Technology Letters; (USA)
·
OSTI ID:5418585
Low threshold current implanted-planar buried-heterostructure graded-index separate confinement heterostructure laser in GaAs/AlGaAs
Journal Article
·
Mon May 14 00:00:00 EDT 1990
· Applied Physics Letters; (USA)
·
OSTI ID:6813352
Low threshold current Implanted-Planar-Buried-Heterostructure, Graded-Index, Separate-Confinement-Heterostructure GaAs-AlGaAs laser
Conference
·
Sun Dec 31 23:00:00 EST 1989
·
OSTI ID:5088724