Vertical-cavity surface-emitting laser diodes fabricated by phase-locked epitaxy

Journal Article · Mon Oct 21 04:00:00 EDT 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106414· OSTI ID:5154555

Walker, J D; Kuchta, D M; Smith, J S ^[1]

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1. Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, California (USA)

We report 10 mW cw room-temperature operation of an electrically pumped vertical-cavity surface-emitting laser diode without a heat sink. This same laser produces 19 mW cw when cooled slightly below room temperature. In addition, we present a 9 mW cw laser with a threshold voltage of 1.6 V, and series resistance of 18 {Omega}. These are the first surface-emitting lasers fabricated by phase-locked epitaxy. They are also believed to be the highest power and lowest threshold voltage electrically pumped vertical-cavity structures reported to date. These results establish that phase-locked epitaxy has important applications in the fabrication of surface-emitting lasers and many other structures with similar materials requirements.

• OSTI ID: 5154555
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:17; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

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