Compositional dependence of the luminescence of In{sub 0.49}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.51}P alloys near the direct{endash}indirect band-gap crossover

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.53.15893· OSTI ID:284725

Nelson, J S; Jones, E D ^[1]; Myers, S M; Follstaedt, D M ^[2]; Hjalmarson, H P ^[3]; Schirber, J E ^[4]; Schneider, R P ^[5]; Fouquet, J E; Robbins, V M; Carey, K W ^[6]

---

1. Semiconductor Materials and Device Sciences Department, 1113, MS-0601, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
2. Semiconductor Nanostructure Physics Department, 1112, MS-1414, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. Compound Semiconductor Technology Department, 1322, MS-0603, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
4. Solid State Sciences Department, 1100, MS-1437, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
5. Semiconductor Materials Department, 1311, MS-0603, Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
6. Hewlett Packard Laboratories, 3500 Deer Creek Road, Palo Alto, California 94303 (United States)

A number of complementary experimental characterization tools and theoretical band structure methods were used to determine unambiguously the band-edge luminescence as a function of Al concentration, and to place an upper limit on the short-wavelength emission of InAlGaP alloys lattice matched to GaAs. In particular, the direct-to-indirect band-gap crossing has been determined by analyzing a series of metalorganic vapor-phase-epitaxy-grown In{sub 0.49}(Al{sub {ital y}}Ga{sub 1{minus}{ital y}}){sub 0.51}P alloys lattice matched to GaAs with double-crystal x-ray analysis, Rutherford backscattering spectroscopy, pressure- and temperature-dependent photoluminescence, and transmission electron microscopy. The experimental measurements are compared to first-principles plane-wave pseudopotential band structure calculations for the ternary end points, InGaP and InAlP. The maximum room temperature direct band gap is found to be 2.24 eV, corresponding to an Al composition of {ital y}=0.52{plus_minus}0.02, in good agreement with the theoretical prediction of 0.58{plus_minus}0.05. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 284725
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 23 Vol. 53; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALKYLATING AGENTS
CHEMICAL COMPOSITION
CRYSTAL STRUCTURE
ELECTRON MICROSCOPY
ELECTRONIC STRUCTURE
ENERGY GAP
EPITAXIAL LAYERS
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
PHOTOLUMINESCENCE
RBS
VAPOR PHASE EPITAXY
VPE
X-RAY DIFFRACTION
XRD