Comparison of Al{sub 0.51}In{sub 0.49}P and Ga{sub 0.51}In{sub 0.49}P window layers for GaAs and GaInAsP solar cells

Book · Wed Dec 31 04:00:00 EST 1997

OSTI ID:304399

Jaakkola, R; Lammasniemi, J; Kazantsev, A B; Tappura, K ^[1]

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1. Tampere Univ. of Technology (Finland). Dept. of Physics

Two window layer materials, Al{sub 0.51}In{sub 0.49}P (E{sub g} = 2.3 eV) and Ga{sub 0.51}In{sub 0.49}P (E{sub g} = 1.88 eV) were compared for gas-source and solid-source MBE grown GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} (E{sub g} = 1.55 eV) solar cells. Due to the wider band-gap of Al{sub 0.51}In{sub 0.49}P, the increased spectral response was observed for both GaAs and Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} material based solar cells. In the case of the GaAs cells, the short-circuit current density was observed to increase from 32.5 mA/cm{sup 2} to 34.4 mA/cm{sup 2} with the Al{sub 0.51}In{sub 0.49}P window layer at AM0. Similar improvement was observed for the Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells.

• OSTI ID: 304399
• Report Number(s): CONF-970953--
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
ALUMINIUM PHOSPHIDES
ANTIREFLECTION COATINGS
CURRENT DENSITY
EXPERIMENTAL DATA
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM PHOSPHIDE SOLAR CELLS
GALLIUM PHOSPHIDES
INDIUM PHOSPHIDE SOLAR CELLS
INDIUM PHOSPHIDES
MOLECULAR BEAM EPITAXY
QUANTUM EFFICIENCY
SPECTRAL RESPONSE