Large area GaInAsP solar cells grown by gas-source MBE on GaAs substrates
Journal Article
·
· IEEE Transactions on Electron Devices
- Tampere Univ. of Technology (Finland). Dept. of Physics
Large area (1 x 1 cm{sup 2}) Ga{sub 0.84}In{sub 0.16}As{sub 0.68}P{sub 0.32} solar cells with a band-gap of 1.50 eV were grown by gas-source MBE on GaAs substrates. Both n-on-p and p-on-n structures were fabricated and studied. The n-on-p cells showed significantly better total area conversion efficiencies (14.3% at AM0, 1-sun, with 20% of grid obscuration) than p-on-n structures (10.5%, same conditions) due to longer minority carrier lifetimes in the p-type and heavily doped n-type emitter layers.
- OSTI ID:
- 178302
- Journal Information:
- IEEE Transactions on Electron Devices, Journal Name: IEEE Transactions on Electron Devices Journal Issue: 9 Vol. 42; ISSN IETDAI; ISSN 0018-9383
- Country of Publication:
- United States
- Language:
- English
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