Band alignment study of lattice-matched In{sub 0.49}Ga{sub 0.51}P and Ge using x-ray photoelectron spectroscopy
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore)
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)
- School of Electrical and Electronic Engineering, Nanyang Technological University (NTU), Nanyang Avenue, Singapore 639798 (Singapore)
- Department of Physics, National University of Singapore, Singapore 117551 (Singapore)
Lattice-matched In{sub 0.49}Ga{sub 0.51}P was grown on a p-type Ge(100) substrate with a 10° off-cut towards the (111) by low temperature molecular beam epitaxy, and the band-alignment of In{sub 0.49}Ga{sub 0.51}P on Ge substrate was obtained by high resolution x-ray photoelectron spectroscopy. The valence band offset for the InGaP/Ge(100) interface was found to be 0.64 ± 0.12 eV, with a corresponding conduction band offset of 0.60 ± 0.12 eV. The InGaP/Ge interface is found to be of the type I band alignment.
- OSTI ID:
- 22310822
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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