Role of substrates for heteroepitaxial growth of low room-temperature resistivity RuO{sub 2} thin films deposited by pulsed laser deposition

Journal Article · Wed May 01 00:00:00 EDT 1996 · Journal of Vacuum Science and Technology, A

DOI:https://doi.org/10.1116/1.580277· OSTI ID:284657

Jia, Q X; Wu, X D; Song, G; Foltyn, S R ^[1]

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1. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

Conductive RuO{sub 2} thin films were grown on different substrates by pulsed laser deposition. Films deposited on MgO are of (110) orientation and of polycrystalline nature, while highly crystalline RuO{sub 2} films can be heteroepitaxially grown on LaAlO{sub 3} and yttria-stabilized zirconia (YSZ) substrates under proper processing conditions. The crystalline RuO{sub 2} thin films show metallic resistivity versus temperature characteristics and have a room-temperature resistivity of 35{plus_minus}2 {mu}{Omega}cm. A residual resistivity ratio ({rho}{sub 300 K}/{rho}{sub 4.2 K}) of around 5 has been achieved for the RuO{sub 2} thin films grown at a substrate temperature of 700{degree}C on both LaAlO{sub 3} and YSZ. {copyright} {ital 1996 American Vacuum Society}

• OSTI ID: 284657
• Report Number(s): CONF-9510385--
• Journal Information: Journal of Vacuum Science and Technology, A, Journal Name: Journal of Vacuum Science and Technology, A Journal Issue: 3 Vol. 14; ISSN 0734-2101; ISSN JVTAD6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM OXIDES
COMPARATIVE EVALUATIONS
ELECTRIC CONDUCTIVITY
ENERGY BEAM DEPOSITION FILMS
LANTHANUM OXIDES
LASER RADIATION
MAGNESIUM OXIDES
MICROSTRUCTURE
RUTHENIUM
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
YTTRIUM OXIDES
ZIRCONIUM OXIDES