Deposition and characterization of crystalline conductive RuO{sub 2} thin films
- Materials Science and Technology Division, Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Highly conductive metal-oxide RuO{sub 2} thin films have been successfully grown on yttria-stabilized zirconia (YSZ) substrates by pulsed laser deposition. Epitaxial growth of RuO{sub 2} thin films on YSZ and the atomically sharp interface between the RuO{sub 2} and the YSZ substrate are clearly evident from cross-sectional transmission electron microscopy. A diagonal-type epitaxy of RuO{sub 2} on YSZ is confirmed from x-ray diffraction measurements. The crystalline RuO{sub 2} thin films, deposited at temperatures in the range of 500 {degree}C to 700 {degree}C, have a room-temperature resistivity of 35{plus_minus}2 {mu}{Omega}-cm, and the residual resistance ratio ({ital R}{sub 300K}/{ital R}{sub 4.2K}) is around 5 for the crystalline RuO{sub 2} thin films. {copyright} 1995 Materials Research Society
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 239350
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 10 Vol. 10; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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