Heteroepitaxial growth of highly conductive metal oxide RuO{sub 2} thin films by pulsed laser deposition
- Superconductivity Technology Center, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
- Electronic and Power Sources Directorate, Army Research Laboratory, Fort Monmouth, New Jersey 07703 (United States)
Highly conductive ruthenium oxide (RuO{sub 2}) has been epitaxially grown on LaAlO{sub 3} substrates by pulsed laser deposition. The RuO{sub 2} film is ({ital h}00) oriented normal to the substrate surface. The heteroepitaxial growth of RuO{sub 2} on LaAlO{sub 3} is demonstrated by the strong in-plane orientation of thin films with respect to the major axes of the substrate. High crystallinity of RuO{sub 2} thin films is also determined from Rutherford backscattering channeling measurements. Electrical measurements on the RuO{sub 2} thin films demonstrate a quite low room-temperature resistivity of 35{plus_minus}2 {mu}{Omega} cm at deposition temperatures of above 500 {degree}C. {copyright} {ital 1995} {ital American} {ital Institute} {ital of} {ital Physics}.
- OSTI ID:
- 249382
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 12 Vol. 67; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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