Carbon incorporation for strain compensation during solid phase epitaxial recrystallization of SiGe on Si at 500{endash}600{degree}C
- Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
- Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Transmission electron microscopy has been combined with time-resolved reflectivity and ion channeling to study the effects of carbon doping on solid-phase epitaxial regrowth (SPER) of strained 2000 A, Si{sub 0.88}Ge{sub 0.12}Si alloy layers grown by molecular-beam epitaxy (MBE). Relative to the undoped layers, carbon incorporation in the MBE grown SiGe layers prior to regrowth at moderate temperatures (500{endash}700{degree}C) has three main effects on SPER. These include a reduction in SPER rate, a delay in the onset of strain-relieving defect formation, and a sharpening of the amorphous/crystalline ({ital a}/{ital c}) interface, i.e., promotion of a two-dimensional (planar) growth front. These results suggest that C incorporated during SPER reduces the lattice-mismatch strain. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Oak Ridge National Laboratory
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 283795
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 10 Vol. 79; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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