Monolithic integration of AlGaInP laser diodes on SiGe/Si substrates by molecular beam epitaxy

Journal Article · Sat Jul 01 04:00:00 EDT 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2209068· OSTI ID:20879947

Kwon, O; Boeckl, J J; Lee, M L; Pitera, A J; Fitzgerald, E A; Ringel, S A ^[1]

---

1. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

Room temperature operation of visible AlGaInP laser diodes epitaxially integrated on Si was demonstrated. Compressively strained laser heterostructures were grown by molecular beam epitaxy (MBE) on low dislocation density SiGe/Si substrates, where the threading dislocation density of the top relaxed Ge layers was measured in the range of 2x10{sup 6} cm{sup -2}. A threshold current density of J{sub th}{approx}1.65 kA/cm{sup 2} for the as-cleaved, gain-guided AlGaInP laser grown on SiGe/Si was obtained at the peak emission wavelength of 680 nm under pulsed mode current injection. These results show that not only can high quality AlGaInP materials grown by MBE be achieved on Si via relaxed SiGe interlayers, but the prototype demonstration of laser diode operation on Si illustrates that very defect sensitive optoelectronics in the III-P system can indeed be integrated with Si substrates by heteroepitaxial methods.

• OSTI ID: 20879947
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 100; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ALUMINIUM COMPOUNDS
CURRENT DENSITY
DENSITY
DISLOCATIONS
GALLIUM COMPOUNDS
GERMANIUM SILICIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INTEGRATED CIRCUITS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THRESHOLD CURRENT