Kinetics of solid phase epitaxial regrowth in amorphized Si[sub 0. 88]Ge[sub 0. 12] measured by time-resolved reflectivity

Journal Article · Mon Feb 01 04:00:00 EST 1993 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.108892· OSTI ID:6901566

Lee, C ^[1]; Haynes, T E ^[2]; Jones, K S ^[1]

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1. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6048 (United States)

Time-resolved reflectivity has been used to measure the rate of solid phase epitaxial regrowth (SPER) [ital in] [ital situ] during annealing of strained Si[sub 0.88]Ge[sub 0.12] epilayers on Si preamorphized by the implantation of Si. The SPER velocities were measured over more than two orders of magnitude at temperatures from 503 to 603 [degree]C. The results confirm that the average SPER velocity in thin, strained Si[sub 0.88]Ge[sub 0.12] layers is less than that in pure Si. Furthermore, these real-time measurements demonstrate that the SPER rate for strained Si[sub 0.88]Ge[sub 0.12] alloys is not a constant during regrowth at a fixed temperature but varies systematically as a function of the position of the amorphous-crystalline interface. The activation energy barrier of SPER in strained Si[sub 0.88]Ge[sub 0.12] is higher than that in pure Si and is also a function of interface position, ranging from 2.94 to 3.11 eV. Cross-section transmission electron microscopy shows that strain-relieving defects are introduced coincidentally with the minimum regrowth rate.

• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6901566
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 62:5; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
ALLOY SYSTEMS
ALLOYS
AMORPHOUS STATE
ANNEALING
BINARY ALLOY SYSTEMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
EPITAXY
GERMANIUM ALLOYS
HEAT TREATMENTS
ION IMPLANTATION
MEASURING METHODS
MOLECULAR BEAM EPITAXY
OPTICAL REFLECTION
REAL TIME SYSTEMS
RECRYSTALLIZATION
REFLECTION
RELAXATION
SILICON ALLOYS
STRESS RELAXATION