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Title: Microporous polyimide films for reduced dielectric applications

Technical Report ·
DOI:https://doi.org/10.2172/282789· OSTI ID:282789

Limiting factor to computer chip speed and size is the dielectric constant of the interlayer insulating materials, which has been reduced going from inorganic to organic type materials. A further reduction, together with better mechanical properties, is still needed. We have developed a spincoating method in conjunction with a thermodynamic process (Non-solvent Induced Phase Separation) to create microporous polyimide films with both lower dielectric constant and better stress reduction properties compared to solid films. In this method, we spincoat a soluble polyimide solution in 1, 3-dimethoxybenzene solvent onto a Si wafer, and then immediately submerse the wet polymer film into a non-solvent bath, typically toluene. Phase separation of the polymer occurs on a micron size scale and the resulting microporous structure becomes locked in by the high glass transition temperature of the polyimide. Factors affecting film morphology, thickness, pore size, and % porosity include polymer concentration, spin speed, and non-solvent type. Morphology is explained in terms of thermodynamics and kinetics of phase separation and diffusion, using an idealized ternary phase diagram. One particular film having 68% porosity, 22 microns thickness, and 1.4 micron pore size had a dielectric constant of 1.88 and loss of 0.002. Stress measurements indicated that the microporous film reduced surface stress on the wafer by more than a factor of 10 compared to analogous solid polyimide film.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
282789
Report Number(s):
SAND-94-2831; ON: DE96014163
Resource Relation:
Other Information: PBD: Aug 1996
Country of Publication:
United States
Language:
English