Single ionization absolute cross section measurements for electron-impact of Ne-like silicon ions
Measurements of absolute cross sections for electron-impact single ionization of Si{sup 4+} have been performed at ORNL. Incident electron energies range from below threshold to 1500 eV. Cross section measurements below the 2p ionization threshold were non-zero, indicating the presence of ions in the 2p{sup 5}3s metastable configuration in the ion beam. The reduced cross sections for Si{sup 4+} are compared to previous measurements for isoelectronic Ar{sup 8+} as a function of incident electron energy in 2p ionization threshold units. Evidence for indirect processes contributing to the measured 2p{sup 5}3s ionization cross sections is supported by measurements and calculations for isoelectronic systems.
- DOE Contract Number:
- AC05-84OR21400
- OSTI ID:
- 281541
- Report Number(s):
- CONF-9305421--
- Journal Information:
- Bulletin of the American Physical Society, Journal Name: Bulletin of the American Physical Society Journal Issue: 3 Vol. 38; ISSN 0003-0503; ISSN BAPSA6
- Country of Publication:
- United States
- Language:
- English
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