Three-dimensional modeling of low-dose BF{sup +}{sub 2} implantation into single-crystalline silicon
Journal Article
·
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
- Semiconductor Research and Development Center, IBM East Fishkill Facility, Hopewell Junction, New York 12533 (United States)
- Research Center Rossendorf Inc., Institute for Ion Beam Physics and Materials Research, P.O. Box 510119, D-01314 Dresden (Germany)
Three-dimensional (3D) simulations of 15 keV BF{sup +}{sub 2} implantation into (100) Si for an ion dose of 1{times}10{sup 13} cm{sup {minus}2} are performed using the binary collision code Crystal-TRIM. At this relatively low dose, damage accumulation during ion bombardment can be neglected. For a given area at the target surface irradiated by the ion beam and impenetrable masks, 3D range distributions can therefore be calculated by the superposition of {open_quote}{open_quote}point response{close_quote}{close_quote} profiles. The influence of channeling effects on the 3D boron range distribution in channeling and tilt-angle implantations are studied in detail. In addition to the simulation of 3D profiles, the depth distributions of boron and fluorine are compared with recently published experimental data. {copyright} {ital 1996 American Vacuum Society}
- OSTI ID:
- 279562
- Report Number(s):
- CONF-9503253--
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 1 Vol. 14; ISSN JVTBD9; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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