Quantum limits on classical permanent memories

Journal Article · Fri Mar 01 04:00:00 EST 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.53.6931· OSTI ID:279055

Sa de Melo, C A ^[1]

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1. Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439 (United States)

At the mesoscopic level a single domain of a classical permanent memory may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects, the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature, both in the absence and in the presence of an external static electric field. Environmental effects (phonons, defects, and surfaces) are also considered. {copyright} {ital 1996 The American Physical Society.}

• Research Organization: Argonne National Laboratory (ANL), Argonne, IL
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 279055
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 11 Vol. 53; ISSN 0163-1829; ISSN PRBMDO
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
DOMAIN STRUCTURE
FERROELECTRIC MATERIALS
FLUCTUATIONS
GRAINS
POLARIZATION
TUNNELING