Quantum switching of polarization in mesoscopic ferroelectrics

Journal Article · Thu Aug 01 04:00:00 EDT 1996 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.54.5829· OSTI ID:383216

Sa de Melo, C A ^[1]

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1. Argonne National Laboratory, Materials Science Division, Argonne, Illinois 60439 (United States)

A single domain of a uniaxial ferroelectric grain may be thought of as a classical permanent memory. At the mesoscopic level this system may experience considerable quantum fluctuations due to tunneling between two possible memory states, thus destroying the classical permanent memory effect. To study these quantum effects the concrete example of a mesoscopic uniaxial ferroelectric grain is discussed, where the orientation of the electric polarization determines two possible memory states. The possibility of quantum switching of the polarization in mesoscopic uniaxial ferroelectric grains is thus proposed. To determine the degree of memory loss, the tunneling rate between the two polarization states is calculated at zero temperature both in the absence and in the presence of an external static electric field. In addition, a discussion of crossover temperature between thermally activated behavior and quantum tunneling behavior is presented. And finally, environmental effects (phonons, defects, and surfaces) are also considered. {copyright} {ital 1996 The American Physical Society.}

• OSTI ID: 383216
• Journal Information: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Journal Issue: 8 Vol. 54; ISSN PRBMDO; ISSN 0163-1829
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
EXTERNAL FIELDS
FERROELECTRIC MATERIALS
FLUCTUATIONS
MEMORY DEVICES
NANOSTRUCTURES
POLARIZATION
TEMPERATURE ZERO K
TUNNEL EFFECT