Ferroelectric symmetry-protected multibit memory cell

Baudry, Laurent; Lukyanchuk, Igor; Vinokur, Valerii M.

doi:10.1038/srep42196

Ferroelectric symmetry-protected multibit memory cell

Journal Article · Wed Feb 08 00:00:00 EST 2017 · Scientific Reports

DOI:https://doi.org/10.1038/srep42196· OSTI ID:1352560

Baudry, Laurent ^[1]; Lukyanchuk, Igor ^[2]; Vinokur, Valerii M. ^[3]

Univ. des Sciences et Technologies de Lille, Villeneuve d'Ascq Cedex (France)
Univ. of Picardie, Amiens (France)
Argonne National Lab. (ANL), Argonne, IL (United States)

Here, the tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.

View Accepted Manuscript (DOE)

Research Organization:: Argonne National Laboratory (ANL)

Sponsoring Organization:: Community Research and Development Information Service (CORDIS); European Commission; Materials Sciences and Engineering Division; Seventh Framework Programme (FP7); USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-06CH11357

OSTI ID:: 1352560

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 7; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Kinetic control of tunable multi-state switching in ferroelectric thin films Xu, R.; Liu, S.; Saremi, S. Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-09207-9	journal	March 2019
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