Growth of {ital n}- and {ital p}-type Al(As)Sb by metalorganic chemical vapor deposition
- Sandia National Laboratory, Albuquerque, New Mexico 87185 (United States)
AlSb and AlAs{sub {ital x}}Sb{sub 1{minus}{ital x}} epitaxial films grown by metalorganic chemical vapor deposition were successfully doped {ital p}- or {ital n}-type using diethylzinc or tetraethyltin, respectively. AlSb films were grown at 500{degree} C and 76 Torr using trimethylamine alane and triethylantimony. AlAs{sub 0.16}Sb{sub 0.84} films lattice matched to InAs were grown at 600{degree} C and 76 Torr by adding arsine. Secondary ion mass spectroscopy showed C and O levels below 2{times}10{sup 18} and 6{times}10{sup 18} cm{sup {minus}3}, respectively, for undoped AlSb. Similar levels of O were found in AlAs{sub 0.16}Sb{sub 0.84} films but C levels were an order of magnitude less in undoped and Sn-doped AlAs{sub 0.16}Sb{sub 0.84} films. Hall measurements of AlAs{sub 0.16}Sb{sub 0.84} showed hole concentrations between 1{times}10{sup 17} to 5{times}10{sup 18} cm{sup {minus}3} for Zn-doped material and electron concentrations in the low to mid- 10{sup 18} cm{sup {minus}3} for Sn-doped material. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 278623
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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