The growth of mid-infrared lasers and AIAs{sub x}Sb{sub 1-x} by MOCVD
We have grown AlSb and AlAs{sub x}Sb{sub 1-x} epitaxial layers by metal-organic chemical vapor deposition (MOCVD) using trimethylamine or ethyldimethylamine alane, triethylantimony and arsine. These layers were successfully doped p- or n-type using diethylzinc or tetraethyltin, respectively. We examined the growth of AlAs{sub x}Sb{sub 1-x} using temperatures of 500 to 600{degrees}C, pressures of 65 to 630 torr, V/III ratios of 1-17, and growth rates of 0.3 to 3.7 {mu}m/hour in a horizontal quartz reactor. We have also fabricated gain-guided, injection lasers using AlAs{sub x}Sb{sub 1-x} for optical confinement and a strained InAsSb/InAs multi-quantum well active region using MOCVD. In pulsed mode, the laser operated up to 210 K with an emission wavelength of 3.8-3.9 {mu}m.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 274192
- Report Number(s):
- SAND--96-1654C; CONF-960813--1; ON: DE96011981
- Country of Publication:
- United States
- Language:
- English
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