Experimental evidence of the temperature and angular dependence in SEGR

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.510737· OSTI ID:277735

Mouret, I ^[1]; Calvet, M C ^[2]; Calvel, P ^[3]

---

1. Motorola Semiconducteurs, Toulouse (France)
2. Aerospatiale, Les Mureaux (France)
3. Alcatel Espace, Toulouse (France); and others

Double-diffused metal-oxide-semiconductor (DMOS) power devices are capable of conducting large currents when turned on and withstanding large voltages when turned off. Power DMOS transistors are widely used in space applications. However, in the cosmic-ray environment, they are exposed to energetic heavy ions. The passage of a single heavy ion through the device can lead to significant permanent degradation of the device or even catastrophic failure. In power Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), two single event effects have been observed: Single-Event Burnout (SEB) and SEGR. These phenomena can be understood in terms of the physical structure of the device. Here, the temperature and angular dependence of Single-Event Gate Rupture (SEGR) experiments show that a normal incident angle favors SEGR and elevated temperature is insignificant. Both the oxide and substrate response play a major role in determining the SEGR sensitivity.

• OSTI ID: 277735
• Report Number(s): CONF-9509107--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ERRORS
EXPERIMENTAL DATA
IONIZING RADIATIONS
MOSFET
PHYSICAL RADIATION EFFECTS
SPACE FLIGHT
TEMPERATURE DEPENDENCE