SEGR and SEB in n-channel power MOSFETs

Journal Article · Sat Nov 30 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.556887· OSTI ID:445460

Allenspach, M; Johnson, G H; Schrimpf, R D; Brews, J R; Galloway, K F ^[1]; Dachs, C; Lorfevre, E; Palau, J M ^[2]; Titus, J L ^[3]; Wheatley, C F ^[4]

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1. Univ. of Arizona, Tucson, AZ (United States). Electrical and Computer Engineering Dept.
2. Univ. Montpellier II (France). Centre d`Electronique de Montpellier
3. Naval Surface Warfare Center, Crane, IN (United States)
4. Wheatley (C.F.), Drums, PA (United States)

For particular bias conditions, it is shown that a device can fail due to either single-event gate rupture (SEGR) or to single-event burnout (SEB). The likelihood of triggering SEGR is shown to be dependent on the ion impact position. Hardening techniques are suggested.

• Sponsoring Organization: Defense Nuclear Agency, Washington, DC (United States); National Aeronautics and Space Administration, Washington, DC (United States)
• OSTI ID: 445460
• Report Number(s): CONF-960773--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 6Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COMPUTERIZED SIMULATION
FAILURES
HEAVY IONS
MOSFET
PHYSICAL RADIATION EFFECTS
SPACE DEPENDENCE
THEORETICAL DATA