A review of the techniques used for modeling single-event effects in power MOSFET`s

Journal Article · Mon Apr 01 04:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.490900· OSTI ID:242434

Johnson, G H; Galloway, K F; Schrimpf, R D ^[1]; Palau, J M; Dachs, C ^[2]

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1. Univ. of Arizona, Tucson, AZ (United States). Dept. of Electrical and Computer Engineering
2. Univ. Montpellier II (France). Centre d`Electronique de Montpellier

Heavy ions can trigger catastrophic failure modes in power metal-oxide-semiconductor field-effect transistors (MOSFET`s). Single-event effects (SEE), namely, single-event burnout (SEB), and single-event gate rupture (SEGR), of power MOSFET`s are catastrophic failure mechanisms that are initiated by the passage of a heavy ion through the device structure. Various analytical, semianalytical, and simulation models have been developed to help explain these phenomena. This paper presents a review of these models and explains their merits and limitations. New results are included to illustrate the approaches.

• OSTI ID: 242434
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANALYTICAL SOLUTION
CHARGE DISTRIBUTION
EVALUATION
MATHEMATICAL MODELS
MOSFET
PHYSICAL RADIATION EFFECTS