Experimental studies of single-event gate rupture and burnout in vertical power MOSFET`s

Journal Article · Sun Mar 31 23:00:00 EST 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.490899· OSTI ID:242433

Titus, J L ^[1]; Wheatley, C F ^[2]

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1. NSWC, Crane, IN (United States)
2. Wheatley (C.Frank), Drums, PA (United States)

Numerous studies have revealed that vertical power MOSFET`s are susceptible to single-event burnout (SEB) and single-event gate rupture (SEGR), resulting in degraded performance or even catastrophic failure when operated in a cosmic-ray environment like space. This paper summarizes many of those experimental studies and examines the problems, test methodologies, and experimental results. Previously unavailable information on SEGR is also provided.

• OSTI ID: 242433
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COSMIC RADIATION
MOSFET
PERFORMANCE TESTING
PHYSICAL RADIATION EFFECTS
SPACE FLIGHT