Radiation induced thermally stimulated luminescence and conductivity in SIMOX oxides

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.510723· OSTI ID:277721

Martini, M; Meinardi, F; Rosetta, E; Spinolo, G; Vedda, A ^[1]; Leray, J L; Paillet, P; Autran, J L ^[2]; Devine, R A.B. ^[3]

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1. Univ. di Milano (Italy). Dipt. di Fisica
2. CEA Centre d`Etudes de Bruyeres, Bruyeres-le-Chatel (France)
3. CNET-France Telecom, Meylan (France)

Thermally Stimulated Luminescence (TSL) and Conductivity (TSC) induced by X-ray irradiation in SIMOX buried oxides have been studied from room temperature up to 400 C. The characteristics of an X-ray induced TSL glow peak detected around 62 C are presented: specifically, results on the emission wavelength and trap depth are shown. The X-ray induced TSC, observed at approximately 70 C, is due to the same trapped species responsible of the TSL emission. The stability after irradiation and dose dependence of both TSL and TSC signals have also been investigated. The results have been compared with similar studies on high temperature annealed thermal SiO{sub 2} films and bulk materials.

• OSTI ID: 277721
• Report Number(s): CONF-9509107--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt1 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ELECTRIC CONDUCTIVITY
EXPERIMENTAL DATA
OPTICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SILICON OXIDES
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
X RADIATION