Characterization of an irradiated double-sided silicon strip detector with fast binary readout electronics in a pion beam

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.506659· OSTI ID:277634

Unno, Y; Kohriki, T; Kondo, T ^[1]

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1. and others

The authors report on the characterization of an AC-coupled, double-sided silicon strip detector, with fast binary readout electronics, in a pion beam before and after proton irradiation. The proton irradiation was non-uniform and to increase the damage the detector was heated to accelerate the anti-annealing. The effective radiation level was about 1 {times} 10{sup 14} p/cm{sup 2}. Both the bias voltage of the detector and the threshold of the discriminator of the binary readout electronics were varied, and the efficiencies were determined. The irradiated detector clearly shows the effect of bulk inversion. The binary system proved to be efficient well below the full depletion voltage on the p-n junction side. Due to the highly nonuniform irradiation, the depletion voltage changes from close to zero to about 120V along a single strip, but the detector appears to work without any noticeable failures.

• OSTI ID: 277634
• Report Number(s): CONF-951073--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ANNEALING
EXPERIMENTAL DATA
HEATING
PHYSICAL RADIATION EFFECTS
PULSE DISCRIMINATORS
RADIATION DOSES
READOUT SYSTEMS
SI SEMICONDUCTOR DETECTORS