Efficiency of non-uniformly irradiated double-sided silicon strip detectors

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.506652· OSTI ID:277627

Dubbs, T; Kashigin, S; Kratzer, M ^[1]

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1. Univ. of California, Santa Cruz, CA (United States); and others

The authors have investigated the efficiency and the noise occupancy of a double-sided silicon strip detector, which was subjected to non-uniform proton irradiations up to a maximum equivalent fluence of 5 {center_dot} 10{sup 13}p {center_dot} cm{sup {minus}2}. The depletion voltage, varying over time due to controlled annealing, was close to zero on one end of the 6cm strips and 190V at the high radiation end. They have determined the efficiency and noise occupancy on both n-side and p-side in a {sup 106}Ru telescope, using a binary read-out system with 22ns shaping time. The n-side exhibits superior performance after type inversion.

• OSTI ID: 277627
• Report Number(s): CONF-951073--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

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RADIATION FLUX
READOUT SYSTEMS
RUTHENIUM 106
SI SEMICONDUCTOR DETECTORS