Performances of SI GaAs detectors fabricated with implanted ohmic contacts

Journal Article · Sat Jun 01 04:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.506650· OSTI ID:277625

Nava, F; Alietti, M; Canali, C; Chiossi, C ^[1]; Cavallini, A ^[2]; Papa, C del ^[3]; Re, V ^[4]; Lanzieri, C ^[5]

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1. Univ. di Modena (Italy)
2. Univ. di Bologna (Italy). Dept. di Fisica
3. Univ. di Udine (Italy). Dept. di Fisica
4. Univ. di Pavia (Italy). Dept. di Elettronica
5. Alenia S.p.A., Roma (Italy)

The slow component of the output pulse of Semi-Insulating (SI) Gallium Arsenide (GaAs) particle detectors, which affects charge collection efficiency (cce), has been generally attributed to trapping/detrapping effects. However, most of the detectors analyzed in the literature can only be operated below the voltage V{sub d} necessary to extend the electric field all the way to the ohmic contact, making difficult to distinguish between the effect of the non-active part of the detector and that of trapping/detrapping. To do that, the authors have carefully analyzed the output signals of SI GaAs detectors, operated below and above V{sub d} and irradiated with {sup 241}Am {alpha} particles. When the detector is biased below V{sub d} the output signals are affected also by the non-active part of the detector itself, while, when the detector is operated above V{sub d}, the output signals are only affected by trapping/detrapping of charge carriers. The authors found that trapping/detrapping is only relevant for the hole contribution to the signal. Trapping/detrapping effects are in agreement with the characteristics of deep levels present in the detectors as analyzed by means of PICTS (Photo Induced Current Transient Spectroscopy) and P-DLTS (Photo Deep Level Transient Spectroscopy).

• OSTI ID: 277625
• Report Number(s): CONF-951073--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
ALPHA PARTICLES
AMERICIUM 241
ELECTRIC CONTACTS
ELECTRIC POTENTIAL
GALLIUM ARSENIDES
IONIZING RADIATIONS
PERFORMANCE
SEMICONDUCTOR DETECTORS