Refractive indices of zincblende structure {beta}-GaN(001) in the subband-gap region (0.7{endash}3.3 eV)
- Instituto de Investigacion en Communicacion Optica, Universidad Autonoma de San Luis Potosi, Alvaro Obregon 64, San Luis Potosi (Mexico)
- Materials Science Department, Coordinated Science Laboratory, and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
Refractive indices {ital n} and absorption coefficients {alpha} of epitaxial metastable zincblende structure {beta}-GaN(001) were determined over the subband-gap energy range between 0.8{endash}3.1 eV from an analysis of optical transmission spectra. {ital n} was found to vary from 2.25 to 0.8 eV (1.55 {mu}m) to 2.50 at 3.1 eV (0.4 {mu}m) with an energy {ital E} (eV) dependence that is well described by a Sellmeir-type dispersion relationship, {ital n}{sup 2}({ital E})=1+148/(38.3{minus}{ital E}{sup 2}). The refractive indices of {beta}-GaN are 3{percent}{endash}4{percent} smaller than previously reported values for hexagonal {alpha}-GaN. {copyright} {ital 1996 American Institute of Physics.}
- Research Organization:
- University of Illinois
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 277179
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 68; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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