Quantum shift of band-edge stimulated emission in InGaN{endash}GaN multiple quantum well light-emitting diodes

Journal Article · Sun Jun 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.118762· OSTI ID:508923

Sun, C J; Zubair Anwar, M; Chen, Q; Yang, J W; Asif Khan, M ^[1]; Shur, M S ^[2]; Bykhovski, A D ^[3]; Liliental-Weber, Z ^[4]; Kisielowski, C ^[5]; Smith, M; Lin, J Y; Xiang, H X ^[6]

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1. APA Optics Inc., 2950 N. E. 84th Lane, Blaine, Minnesota 55434 (United States)
2. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, New York 12180-3590 (United States)
3. Department of Electrical Engineering, University of Virginia, Charlottesville, Virginia 22903-2442 (United States)
4. Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
5. Department of Materials Science and Mineral Engineering, University of California at Berkeley, Berkeley, California 94720 (United States)
6. Department of Physics, Kansas State University, Manhattan, Kansas 66506 (United States)

We report on the band-edge stimulated emission in InGaN{endash}GaN multiple quantum well light-emitting diodes with varying widths and barrier thicknesses of the quantum wells. In these devices, we observe that the stimulated emission peak wavelength shifts to shorter values with decreasing well thickness. From the comparison of the results of the quantum mechanical calculations of the subbands energies with the measured data, we estimate the effective conduction- and valence-band discontinuities at the GaN{endash}In{sub 0.13}Ga{sub 0.87}N heterointerface to be approximately 130{endash}155 and 245{endash}220 meV, respectively. We also discuss the effect of stress on the estimated values of band discontinuities. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 508923
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 70; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
42 ENGINEERING
ELECTRONIC STRUCTURE
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM NITRIDES
LIGHT EMITTING DIODES
STIMULATED EMISSION
STRESSES
THICKNESS