Improvements in dynamic and noise performance of cryogenic GaAs monolithic ASICs

Journal Article · Sat Jun 01 00:00:00 EDT 1996 · IEEE Transactions on Nuclear Science

DOI:https://doi.org/10.1109/23.507164· OSTI ID:276474

Camin, D V; Fedyakin, N; Pessina, G; Previtali, E; Sironi, M ^[1]

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1. Dipartimento di Fisica dell`Universita, Milano (Italy)

The authors have developed two new ASICs for cryogenic operation using a GaAs ion-implanted MESFET process. A preamplifier chip for LAr calorimetry has white series noise above 1 MHz with a spectral density of 0.32 nV/{radical}Hz. Power dissipation is 66 mW and GBW 1.7 GHz. Operation at 22 mW power dissipation is also possible, with lower noise and speed performance. A cryogenic buffer/LED driver with 0.6% integral nonlinearity for 100 mA maximum output current and 8.7 mW standing power dissipation was also developed.

• OSTI ID: 276474
• Report Number(s): CONF-951073--
• Journal Information: IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 3Pt2 Vol. 43; ISSN 0018-9499; ISSN IETNAE
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
INTEGRATED CIRCUITS
PERFORMANCE
POWER LOSSES
PREAMPLIFIERS
READOUT SYSTEMS
SHOWER COUNTERS