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Dynamic and noise performance of large gate area MESFETs made in a monolithic process

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:6883734
; ;  [1]
  1. Istituto Nazionale di Fisica Nucleare, Milano (Italy)

Metal-Semiconductor Field Effect Transistors (MESFETs) with gate area up to 48,000 [mu]m[sup 2] have been designed and fabricated using an ion-implanted GaAs monolithic process. They have been characterized at 300 K and in particular at 77 K and 4 K as they will be used at the input stage of low-noise preamplifiers for different kinds of cryogenic particle detectors. A single device with W = 6,000 [mu]m has a 1/f noise sufficiently low to substitute it for a group of ten discrete MESFETs of the best quality put in parallel at the input of voltage-sensitive preamplifiers for bolometric detectors. A substantial reduction of noise, with high speed and low power dissipation was obtained in a prototype of a preamplifier designed for LAR calorimetry. Using the SPICE parameters extracted from measurements done on the present FETs, the authors designed monolithic low noise preamplifiers for the mentioned applications. The chips are presently under fabrication.

OSTI ID:
6883734
Report Number(s):
CONF-931051--
Journal Information:
IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 41:4Pt1; ISSN 0018-9499; ISSN IETNAE
Country of Publication:
United States
Language:
English