Monolithic cryogenic preamplifiers based on large gate-area GaAs MESFETs
- Dipartimento di Fisica dell`Universita, Milano (Italy)
Monolithic preamplifiers using large gate-area Gallium-Arsenide Metal-Semiconductor Field-Effect Transistors (GaAs MESFETs) at the input have been designed and fabricated using an ion-implanted GaAs process. Large gate-area is necessary to obtain low series noise. A differential voltage-sensitive preamplifier has at the input two MESFETs with a gate width W = 6,000 {micro}m, it is fully DC coupled, has a large common-mode rejection ratio (CMRR) and dissipates low power at 4 K. Dual current-sensitive preamplifiers using at the input MESFETs with W = 24,000 {micro}m, designed for the readout of noble liquid calorimeters, have been integrated in a single chip. Recent tests with a LAr calorimeter prototype demonstrated strong noise reduction compared to previous state-of-the-art hybrid readout circuits. Radiation damage tests have been performed at cold on the current-sensitive preamplifier chips.
- OSTI ID:
- 136899
- Report Number(s):
- CONF-941061--
- Journal Information:
- IEEE Transactions on Nuclear Science, Journal Name: IEEE Transactions on Nuclear Science Journal Issue: 4Pt1 Vol. 42; ISSN IETNAE; ISSN 0018-9499
- Country of Publication:
- United States
- Language:
- English
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