Parametric study of compound semiconductor etching utilizing inductively coupled plasma source
- Plasma Therm IP, St. Petersburg, FL (United States); and others
Inductively Coupled Plasma (ICP) sources are extremely promising for large-area, high-ion density etching or deposition processes. In this review the authors compare results for GaAs and GaN etching with both ICP and Electron Cyclotron Resonance (ECR) sources on the same single-wafer platform. The ICP is shown to be capable of very high rates with excellent anisotropy for fabrication of GaAs vias or deep mesas in GaAs or GaN waveguide structures.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States); Department of Defense, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 266733
- Report Number(s):
- SAND--96-1728C; CONF-960401--64; ON: DE96012938
- Country of Publication:
- United States
- Language:
- English
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