7.86 kV GaN-on-GaN PN power diode with BaTiO3 for electrical field management (in EN)
Devices based on gallium nitride (GaN) have great potential for high power switching applications due to the high breakdown field and high electron mobility. In this work, we present a vertical GaN-on-GaN PN power diode using high dielectric constant material, BaTiO3, for electrical field management and high breakdown voltages, in together with an optimized guard-ring and field plate design. Numerical simulation shows that with high-k dielectrics implemented, the peak electrical field at the PN interface is mitigated from 3.5 to 3.1 MV/cm under a reverse bias of −9.05 kV. The device design with BaTiO3 shows a breakdown voltage of 9.65 kV or about 600 V improvement. The fabricated diodes with a 57 μm thick drift layer demonstrate a breakdown voltage of 7.86 kV on a bulk GaN substrate. The device has an on-resistance of 2.8 mΩ cm2 and a Baliga figure of merit of 22 GW/cm2.
- Research Organization:
- The Ohio State Univ., Columbus, OH (United States)
- Sponsoring Organization:
- USDOE Advanced Research Projects Agency - Energy (ARPA-E)
- DOE Contract Number:
- AR0001036
- OSTI ID:
- 2578385
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 14 Vol. 123; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- EN
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