Scanning probe spectroscopy of sulfur vacancies and MoS2 monolayers in side-contacted van der Waals heterostructures

Nisi, K.; Thomas, J. C.; Levashov, S.; Mitterreiter, E.; Taniguchi, T.; Watanabe, K.; Aloni, S.; Kuykendall, T. R.; Eichhorn, J.; Holleitner, A. W.; Weber-Bargioni, A.; Kastl, C.

doi:10.1088/2053-1583/ada046

Scanning probe spectroscopy of sulfur vacancies and MoS₂ monolayers in side-contacted van der Waals heterostructures

Journal Article · Mon Dec 30 00:00:00 EST 2024 · 2D Materials

DOI:https://doi.org/10.1088/2053-1583/ada046· OSTI ID:2484214

Nisi, K. ^[1]; ^[2]; ^[3]; Mitterreiter, E. ^[4]; Taniguchi, T. ^[5]; ^[5]; Aloni, S. ^[2]; ^[2]; ^[3]; ^[4]; ^[2]; ^[4]

Technical Univ. of Munich (Germany); Munich Center for Quantum Science and Technology (MCQST) (Germany); Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States). Molecular Foundry
Technical Univ. of Munich (Germany)
Technical Univ. of Munich (Germany); Munich Center for Quantum Science and Technology (MCQST) (Germany)
National Institute for Materials Science (NIMS), Tsukuba (Japan)

We investigate the interplay between vertical tunneling and lateral transport phenomena in electrically contacted van der Waals heterostructures made from monolayer MoS₂, hBN, and graphene. We compare data taken by low-temperature scanning tunneling spectroscopy to results from room-temperature conductive atomic force spectroscopy on monolayer MoS₂ with sulfur vacancies and with varying hBN layers. We show that for thick hBN barrier layers, where tunneling currents into the conductive substrate are suppressed, a side-contact still enables addressing the defect states in the scanning tunneling microscopy via the lateral current flow. Few-layer hBN realizes an intermediate regime in which the competition between vertical tunneling and lateral transport needs to be considered. The latter is relevant for device structures with both a thin tunneling barrier and a side-contact to the semiconducting layers.

View Journal Article

Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Science (SC), Basic Energy Sciences (BES). Scientific User Facilities (SUF)

Grant/Contract Number:: AC02-05CH11231

OSTI ID:: 2484214

Alternate ID(s):: OSTI ID: 2545760

Journal Information:: 2D Materials, Journal Name: 2D Materials Journal Issue: 1 Vol. 12; ISSN 2053-1583

Publisher:: IOP PublishingCopyright Statement

Country of Publication:: United States

Language:: English

References (50)

A Hybrid‐Density Functional Theory Study of Intrinsic Point Defects in MX₂ (M = Mo, W; X = S, Se) Monolayers Akkoush, Alaa; Litman, Yair; Rossi, Mariana physica status solidi (a), Vol. 221, Issue 1 https://doi.org/10.1002/pssa.202300180	journal	July 2023
Single‐Photon Emitters in Layered Van der Waals Materials Michaelis de Vasconcellos, Steffen; Wigger, Daniel; Wurstbauer, Ursula physica status solidi (b), Vol. 259, Issue 4 https://doi.org/10.1002/pssb.202100566	journal	February 2022
Photoluminescence Modulation of Graphene/MoS₂ Heterostructures Separated by Laser-Induced Functionalization Cao, Qing; Kreßler, Mira; Hußmann, Marleen Chemistry of Materials, Vol. 36, Issue 7 https://doi.org/10.1021/acs.chemmater.3c03166	journal	February 2024
Observation of Single-Electron Transport and Charging on Individual Point Defects in Atomically Thin WSe₂ Zhang, Rui; Clark, Genevieve; Xu, Xiaodong The Journal of Physical Chemistry C, Vol. 125, Issue 25 https://doi.org/10.1021/acs.jpcc.1c02791	journal	June 2021
Atomistic Positioning of Defects in Helium Ion Treated Single-Layer MoS ₂ Mitterreiter, Elmar; Schuler, Bruno; Cochrane, Katherine A. Nano Letters, Vol. 20, Issue 6 https://doi.org/10.1021/acs.nanolett.0c01222	journal	May 2020
Moiré Potential, Lattice Relaxation, and Layer Polarization in Marginally Twisted MoS₂ Bilayers Tilak, Nikhil; Li, Guohong; Taniguchi, Takashi Nano Letters, Vol. 23, Issue 1 https://doi.org/10.1021/acs.nanolett.2c03676	journal	December 2022
Photovoltage and Photocurrent Absorption Spectra of Sulfur Vacancies Locally Patterned in Monolayer MoS₂ Hötger, Alexander; Männer, Wolfgang; Amit, Tomer Nano Letters, Vol. 23, Issue 24 https://doi.org/10.1021/acs.nanolett.3c03517	journal	December 2023
Symmetry Breaking and Spin–Orbit Coupling for Individual Vacancy-Induced In-Gap States in MoS₂ Monolayers Aliyar, Thasneem; Ma, Hongyang; Krishnan, Radha Nano Letters, Vol. 24, Issue 7 https://doi.org/10.1021/acs.nanolett.3c03681	journal	February 2024
Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe ₂ Zhang, Chendong; Chen, Yuxuan; Johnson, Amber Nano Letters, Vol. 15, Issue 10 https://doi.org/10.1021/acs.nanolett.5b01968	journal	September 2015
Two-Level Quantum Systems in Two-Dimensional Materials for Single Photon Emission Gupta, Sunny; Yang, Ji-Hui; Yakobson, Boris I. Nano Letters, Vol. 19, Issue 1 https://doi.org/10.1021/acs.nanolett.8b04159	journal	December 2018
Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride Ranjan, Alok; Raghavan, Nagarajan; Holwill, Matthew ACS Applied Electronic Materials, Vol. 3, Issue 8 https://doi.org/10.1021/acsaelm.1c00469	journal	August 2021
Nano-“Squeegee” for the Creation of Clean 2D Material Interfaces Rosenberger, Matthew R.; Chuang, Hsun-Jen; McCreary, Kathleen M. ACS Applied Materials & Interfaces, Vol. 10, Issue 12 https://doi.org/10.1021/acsami.8b01224	journal	March 2018
Imaging Valley Excitons in a 2D Semiconductor with Scanning Tunneling Microscope-Induced Luminescence Geng, Hairui; Tang, Jie; Wu, Yanwei ACS Nano, Vol. 18, Issue 12 https://doi.org/10.1021/acsnano.3c12555	journal	March 2024
Rotationally Commensurate Growth of MoS ₂ on Epitaxial Graphene Liu, Xiaolong; Balla, Itamar; Bergeron, Hadallia ACS Nano, Vol. 10, Issue 1 https://doi.org/10.1021/acsnano.5b06398	journal	November 2015
Electron Tunneling through Boron Nitride Confirms Marcus–Hush Theory Predictions for Ultramicroelectrodes Velický, Matěj; Hu, Sheng; Woods, Colin R. ACS Nano, Vol. 14, Issue 1 https://doi.org/10.1021/acsnano.9b08308	journal	December 2019
Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers Britnell, Liam; Gorbachev, Roman V.; Jalil, Rashid Nano Letters, Vol. 12, Issue 3 https://doi.org/10.1021/nl3002205	journal	February 2012
Layer-by-Layer Dielectric Breakdown of Hexagonal Boron Nitride Hattori, Yoshiaki; Taniguchi, Takashi; Watanabe, Kenji ACS Nano, Vol. 9, Issue 1 https://doi.org/10.1021/nn506645q	journal	December 2014
A subthermionic tunnel field-effect transistor with an atomically thin channel Sarkar, Deblina; Xie, Xuejun; Liu, Wei Nature, Vol. 526, Issue 7571 https://doi.org/10.1038/nature15387	journal	September 2015
Quantum engineering at the silicon surface using dangling bonds Schofield, S. R.; Studer, P.; Hirjibehedin, C. F. Nature Communications, Vol. 4, Issue 1 https://doi.org/10.1038/ncomms2679	journal	April 2013
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide Emtsev, Konstantin V.; Bostwick, Aaron; Horn, Karsten Nature Materials, Vol. 8, Issue 3 https://doi.org/10.1038/nmat2382	journal	February 2009
Giant phonon-induced conductance in scanning tunnelling spectroscopy of gate-tunable graphene Zhang, Yuanbo; Brar, Victor W.; Wang, Feng Nature Physics, Vol. 4, Issue 8 https://doi.org/10.1038/nphys1022	journal	July 2008
Electrically driven single-photon emission from an isolated single molecule Zhang, Li; Yu, Yun-Jie; Chen, Liu-Guo Nature Communications, Vol. 8, Issue 1 https://doi.org/10.1038/s41467-017-00681-7	journal	September 2017
Identifying substitutional oxygen as a prolific point defect in monolayer transition metal dichalcogenides Barja, Sara; Refaely-Abramson, Sivan; Schuler, Bruno Nature Communications, Vol. 10, Issue 1 https://doi.org/10.1038/s41467-019-11342-2	journal	July 2019
Charge-state lifetimes of single molecules on few monolayers of NaCl Kaiser, Katharina; Lieske, Leonard-Alexander; Repp, Jascha Nature Communications, Vol. 14, Issue 1 https://doi.org/10.1038/s41467-023-40692-1	journal	August 2023
Charge state-dependent symmetry breaking of atomic defects in transition metal dichalcogenides Xiang, Feifei; Huberich, Lysander; Vargas, Preston A. Nature Communications, Vol. 15, Issue 1 https://doi.org/10.1038/s41467-024-47039-4	journal	March 2024
A substitutional quantum defect in WS2 discovered by high-throughput computational screening and fabricated by site-selective STM manipulation Thomas, John C.; Chen, Wei; Xiong, Yihuang Nature Communications, Vol. 15, Issue 1 https://doi.org/10.1038/s41467-024-47876-3	journal	April 2024
Imaging moiré excited states with photocurrent tunnelling microscopy Li, Hongyuan; Xiang, Ziyu; Naik, Mit H. Nature Materials, Vol. 23, Issue 5 https://doi.org/10.1038/s41563-023-01753-4	journal	January 2024
Filtering the photoluminescence spectra of atomically thin semiconductors with graphene Lorchat, Etienne; López, Luis E. Parra; Robert, Cédric Nature Nanotechnology, Vol. 15, Issue 4 https://doi.org/10.1038/s41565-020-0644-2	journal	March 2020
Integrated photonic quantum technologies Wang, Jianwei; Sciarrino, Fabio; Laing, Anthony Nature Photonics, Vol. 14, Issue 5 https://doi.org/10.1038/s41566-019-0532-1	journal	October 2019
Probing the interplay of interactions, screening and strain in monolayer MoS2 via self-intercalation Pielić, Borna; Mužević, Matko; Novko, Dino npj 2D Materials and Applications, Vol. 8, Issue 1 https://doi.org/10.1038/s41699-024-00488-3	journal	September 2024
Electron tunneling through atomically flat and ultrathin hexagonal boron nitride Lee, Gwan-Hyoung; Yu, Young-Jun; Lee, Changgu Applied Physics Letters, Vol. 99, Issue 24 https://doi.org/10.1063/1.3662043	journal	December 2011
Impact of substrate induced band tail states on the electronic and optical properties of MoS ₂ Klein, J.; Kerelsky, A.; Lorke, M. Applied Physics Letters, Vol. 115, Issue 26 https://doi.org/10.1063/1.5131270	journal	December 2019
Detecting band profiles of devices with conductive atomic force microscopy Li, Ranran; Taniguchi, Takashi; Watanabe, Kenji Review of Scientific Instruments, Vol. 91, Issue 7 https://doi.org/10.1063/5.0008412	journal	July 2020
Quantum emitters in 2D materials: Emitter engineering, photophysics, and integration in photonic nanostructures Kianinia, Mehran; Xu, Zai-Quan; Toth, Milos Applied Physics Reviews, Vol. 9, Issue 1 https://doi.org/10.1063/5.0072091	journal	March 2022
On-demand generation of optically active defects in monolayer WS2 by a focused helium ion beam Micevic, A.; Pettinger, N.; Hötger, A. Applied Physics Letters, Vol. 121, Issue 18 https://doi.org/10.1063/5.0118697	journal	October 2022
2D semiconducting materials for electronic and optoelectronic applications: potential and challenge Kang, Sojung; Lee, Donghun; Kim, Jonghun 2D Materials, Vol. 7, Issue 2 https://doi.org/10.1088/2053-1583/ab6267	journal	February 2020
Controlling the electronic bands of a 2D semiconductor by force microscopy de Araújo, Daniel B.; Almeida, Rodrigo Q.; Gadelha, Andreij C. 2D Materials, Vol. 7, Issue 4 https://doi.org/10.1088/2053-1583/aba5cb	journal	September 2020
An outlook into the flat land of 2D materials beyond graphene: synthesis, properties and device applications McCreary, Amber; Kazakova, Olga; Jariwala, Deep 2D Materials, Vol. 8, Issue 1 https://doi.org/10.1088/2053-1583/abc13d	journal	December 2020
Band gap measurements of monolayer h-BN and insights into carbon-related point defects Román, Ricardo Javier Peña; Costa, Fábio J. R. Costa; Zobelli, Alberto 2D Materials, Vol. 8, Issue 4 https://doi.org/10.1088/2053-1583/ac0d9c	journal	July 2021
The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides Khalid, Shoaib; Medasani, Bharat; Lyons, John L. 2D Materials, Vol. 11, Issue 2 https://doi.org/10.1088/2053-1583/ad2108	journal	January 2024
Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides Khalid, Shoaib; Janotti, Anderson; Medasani, Bharat 2D Materials, Vol. 11, Issue 3 https://doi.org/10.1088/2053-1583/ad4720	journal	May 2024
Resonant and bound states of charged defects in two-dimensional semiconductors Aghajanian, Martik; Schuler, Bruno; Cochrane, Katherine A. Physical Review B, Vol. 101, Issue 8 https://doi.org/10.1103/PhysRevB.101.081201	journal	February 2020
Electronic and magnetic properties of single chalcogen vacancies in MoS2/Au(111) Trishin, Sergey; Lotze, Christian; Krane, Nils Physical Review B, Vol. 108, Issue 16 https://doi.org/10.1103/PhysRevB.108.165414	journal	October 2023
Tip-induced creation and Jahn-Teller distortions of sulfur vacancies in single-layer MoS2 Jansen, Daniel; Tounsi, Tfyeche; Fischer, Jeison Physical Review B, Vol. 109, Issue 19 https://doi.org/10.1103/PhysRevB.109.195430	journal	May 2024
Exciton trapping is responsible for the long apparent lifetime in acid-treated MoS 2 Goodman, A. J.; Willard, A. P.; Tisdale, W. A. Physical Review B, Vol. 96, Issue 12 https://doi.org/10.1103/PhysRevB.96.121404	journal	September 2017
Comprehensive tunneling spectroscopy of quasifreestanding MoS 2 on graphene on Ir(111) Murray, Clifford; Jolie, Wouter; Fischer, Jeison A. Physical Review B, Vol. 99, Issue 11 https://doi.org/10.1103/PhysRevB.99.115434	journal	March 2019
Controlled Charge Switching on a Single Donor with a Scanning Tunneling Microscope Teichmann, K.; Wenderoth, M.; Loth, S. Physical Review Letters, Vol. 101, Issue 7 https://doi.org/10.1103/PhysRevLett.101.076103	journal	August 2008
Large Spin-Orbit Splitting of Deep In-Gap Defect States of Engineered Sulfur Vacancies in Monolayer WS 2 Schuler, Bruno; Qiu, Diana Y.; Refaely-Abramson, Sivan Physical Review Letters, Vol. 123, Issue 7 https://doi.org/10.1103/PhysRevLett.123.076801	journal	August 2019
First-principles investigation of charged dopants and dopant-vacancy defect complexes in monolayer MoS2 Tan, Anne Marie Z.; Freysoldt, Christoph; Hennig, Richard G. Physical Review Materials, Vol. 4, Issue 11 https://doi.org/10.1103/PhysRevMaterials.4.114002	journal	November 2020
Atomic-Scale Coupling of Photons to Single-Molecule Junctions Wu, S. W.; Ogawa, N.; Ho, W. Science, Vol. 312, Issue 5778 https://doi.org/10.1126/science.1124881	journal	April 2006

Similar Records

Heterostructures based on inorganic and organic van der Waals systems

Journal Article · Mon Sep 01 00:00:00 EDT 2014 · APL Materials · OSTI ID:22303565

Andreev reflection between aluminum and graphene across van der Waals barriers

Journal Article · Wed May 31 20:00:00 EDT 2023 · Low Temperature Physics · OSTI ID:2420169

Related Subjects

36 MATERIALS SCIENCE
TMDC
conductive atomic force microscopy
defects
scanning tunneling microscopy
van der Waals heterostructure

Scanning probe spectroscopy of sulfur vacancies and MoS2 monolayers in side-contacted van der Waals heterostructures

Citation Formats

References (50)

Similar Records

Related Subjects

Scanning probe spectroscopy of sulfur vacancies and MoS₂ monolayers in side-contacted van der Waals heterostructures