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XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth

Conference ·
DOI:https://doi.org/10.2172/2540444· OSTI ID:2540444
 [1];  [1];  [1];  [1];  [1];  [1];  [1]
  1. Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
+ Show Author Affiliations
Research Organization:
Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
Vehicle Technologies Program
DOE Contract Number:
NA0003525
OSTI ID:
2540444
Report Number(s):
SAND2024-01782C
Country of Publication:
United States
Language:
English

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